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| High hFE LOW VCE (sat) Silicon NPN Triple Diffused Planar Transistor sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Ratings 80 50 6 3 1 25(Tc=25C) 150 -55 to +150 Unit V V V A A W C C 2SC4495 Application : Audio Temperature Compensation and General Purpose (Ta=25C) Ratings 10max 10max 50min 500min 0.5max 40typ 30typ V MHz pF 13.0min sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=80V VEB=6V IC=25mA VCE=4V, IC=0.5A IC=1A, IB=20mA VCE=12V, IE=-0.1A VCB=10V,f=1MHz External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 Unit A V 16.90.3 8.40.2 A 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 20 RL () 20 IC (A) 1 VBB1 (V) 10 VBB2 (V) -5 IB1 (mA) 15 IB2 (mA) -30 ton (s) 0.45typ tstg (s) 1.60typ tf (s) 0.85typ 2.54 3.9 BCE IC - VCE Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at)( V ) 3 3 0m A VCE( sa t ) - I B Characteristics (Typical) 1.5 I C - VBE Temperature Characteristics (Typical) 3 (V CE= 4V) 1 A 8m 12m A 8mA 2.5 Collector Current I C( A) Collector Current I C (A) 2 5m A 3mA 1 2 1.5 Temp) -55C (Case Tem p) mp) (Ca 125 2mA 1mA IC=1A 0 0 0 0 1 2 3 4 5 6 1 10 100 1000 0 0.5 25C 0.5 C IB=0.5mA 2A (Cas e Te 1 0.5 se 3A 1 0.2 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Part No. b. Lot No. 1 1.5 Collector-Emitter Voltage V C E( V) Base Current I B( mA) Base-Emittor Voltage V B E( V) hFE - IC Characteristics (Typical) (VCE=4V) 3000 DC Cur rent Gain h FE h FE - I C Temperature Characteristics (Typical) (VCE=4V) 5000 D C Cur r ent Gai n h FE j- a( C/W) Transient Thermal Resistance j-a - t Characteristics 7 5 Typ 1000 125C 25C -55C 1000 500 500 100 50 20 0.01 100 0.01 0.1 0.5 1 3 0.1 0.5 1 3 1 1 10 100 Time t(ms) 1000 2000 Collector Current I C( A) Collector Current I C( A) fT - IE Characteristics (Typical) (VCE=12V) 60 10 5 Cu t-off Fre quen cy f T( MH Z) Safe Operating Area (Single Pulse) 30 1m 10 m s P c - T a Derating Natural Cooling Silicone Grease Heatsink: Aluminum in mm 20 W ith In s Collect or Cur ren t I C( A) Typ 40 DC 1 0.5 M aximum Power Dissipa tion P C( W) 10 0m s fin 150x150x2 1 00x1 0 10 0x 2 ite he at 20 si nk Without Heatsink Natural Cooling 0.1 50x50x2 Without Heatsink 2 0 -0.005 -0.01 0.05 -0.1 Emitter Current I E( A) -1 3 5 10 50 100 Collector-Emitter Voltage V C E( V) 0 0 25 50 75 100 125 150 Ambient Temperature Ta(C) 110 This datasheet has been download from: www..com Datasheets for electronics components. |
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